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sci.carrier-concentration-Si Calculator
Calculates intrinsic carrier concentration in silicon: ni = √(Nc×Nv) × exp(−Eg/2kT) at temperature T. At 300 K, ni(Si) = 1.5 × 10¹⁰ cm⁻³ — doping 10¹⁵ cm⁻³ donors makes electron concentration 10⁵× greater than intrinsic, creating strongly n-type silicon.
Inputs
Na Cm3
Amount of solute per unit volume. Higher concentration = more solute dissolved.
Nd Cm3
Amount of solute per unit volume. Higher concentration = more solute dissolved.
T K
Thermal state of the substance. Check whether the formula needs Celsius, Fahrenheit, or Kelvin (K = °C + 273.15).
Results
hole concentration p (/cm³)
The proportional relationship between two quantities.
electron concentration n (/cm³)
The proportional relationship between two quantities.
intrinsic carrier concentration ni
The proportional relationship between two quantities.
resistivity ρ (Ω·cm)
Reference formula or conversion factor shown for context.
np = ni² (mass action law)
The computed mass of the object or substance.
p-type since Na>Nd
The classification or type assigned based on the inputs.