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sci.ion-implant-projected-range Calculator
Calculates projected range Rp and straggle ΔRp for ion implantation into a target using Lindhard-Scharff-Schiott (LSS) theory or SRIM data. Boron at 100 keV in silicon: Rp ≈ 280 nm, ΔRp ≈ 73 nm — post-implant annealing at 900–1,000 °C activates dopants and repairs crystal damage.
Inputs
E Kev
Capacity to do work (J or kWh). Conserved — converts between forms but total stays constant in a closed system.
Z1 Ion
Count of items or occurrences.
Z2 Substrate
Count of items or occurrences.
M1 Amu
Total mass (kg). Distinct from weight — weight = mass × gravity. Mass is constant; weight varies with location.
M2 Amu
Total mass (kg). Distinct from weight — weight = mass × gravity. Mass is constant; weight varies with location.
Results
projected range Rp (nm)
The difference between the maximum and minimum values.
straggle ΔRp (nm, estimate)
The value at the specified point or condition.
junction depth estimate (Rp + 2ΔRp, nm)
The computed depth.
ion/substrate pair
The value at the specified point or condition.
LSS theory (Lindhard-Scharff-Schiott)
Sample size or count used in the calculation.
process note
Supplementary information explaining an assumption, caveat, or important context for interpreting the result.