// multi-utility computation suite · offline · instant · precise
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sci.oxide-growth-Deal-Grove Calculator
Calculates silicon dioxide growth in thermal oxidation using the Deal-Grove model: x² + Ax = B(t+τ), for parabolic (thick) and linear (thin) growth regimes. Dry oxidation at 1,000 °C grows SiO₂ at ≈ 1.5 nm/min — wet oxidation (steam) grows ~10× faster but produces lower-quality oxide.
Inputs
T Hr
Duration of the process. Make sure units match the rate inputs (seconds, minutes, or hours).
T C
Thermal state of the substance. Check whether the formula needs Celsius, Fahrenheit, or Kelvin (K = °C + 273.15).
Wet Dry
Reference formula or conversion factor shown for context.
Xi0 Nm
Perpendicular measurement through the material. For insulation: thicker is better. For beams: directly affects bending resistance.
Results
oxide thickness xox (nm)
Sample size or count used in the calculation.
oxide thickness xox (Å)
Sample size or count used in the calculation.
oxidation regime
The operating regime — the mode or zone in which the system is currently operating.
process type
The classification or type assigned based on the inputs.
x = A/2 · (√(1 + (t+τ)·4B/A²) − 1)
Reference formula or conversion factor shown for context.
gate oxide applications
Recommended use case or application for this configuration or result.