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sci.pn-junction-built-in-voltage Calculator
Calculates pn junction built-in voltage V_bi = (kT/q) × ln(N_A × N_D / ni²) and depletion width from doping concentrations. Silicon pn junction with N_A = N_D = 10¹⁷ cm⁻³ has V_bi = 0.84 V — the built-in field prevents carrier diffusion at equilibrium and is the basis of all semiconductor diodes and solar cells.
Inputs
Na Cm3
Reference formula or conversion factor shown for context.
Nd Cm3
Reference formula or conversion factor shown for context.
T K
Thermal state of the substance. Check whether the formula needs Celsius, Fahrenheit, or Kelvin (K = °C + 273.15).
Results
built-in potential Vbi (V)
Sample size or count used in the calculation.
thermal voltage Vt (V)
Electric potential difference between the two terminals (V). In AC systems, quoted as RMS — 230 V mains has a peak of ~325 V.
Vbi = (kT/q)·ln(Na·Nd/ni²)
Sample size or count used in the calculation.
typical Si p-n junction
Sample size or count used in the calculation.
GaAs vs Si
Reference formula or conversion factor shown for context.