Calculates intrinsic carrier concentration in a semiconductor: ni = √(Nc × Nv) × exp(−Eg/2kT). Silicon ni = 1.5 × 10¹⁰ cm⁻³ at 300 K — doping with 10¹⁷ cm⁻³ boron makes Si p-type with hole concentration 10⁷× above intrinsic.
Inputs
Temperature K
Thermal state of the substance. Check whether the formula needs Celsius, Fahrenheit, or Kelvin (K = °C + 273.15).
Bandgap Ev
Reference formula or conversion factor shown for context.
Effective Mass Ratio N
Total mass (kg). Distinct from weight — weight = mass × gravity. Mass is constant; weight varies with location.
Effective Mass Ratio P
Total mass (kg). Distinct from weight — weight = mass × gravity. Mass is constant; weight varies with location.
Results
intrinsic carrier concentration ni (/m³)
The proportional relationship between two quantities.