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sci.semiconductor-intrinsic-carrier Calculator
Calculates intrinsic carrier density ni(T) = √(Nc × Nv) × exp(−Eg/2kT) as a function of temperature. Silicon ni doubles every ~8 °C — at 200 °C, ni = 10¹⁵ cm⁻³, approaching typical doping levels and causing device leakage failure (silicon thermal limit ≈ 150–200 °C).
Inputs
Nc M3
Mass per unit volume (kg/m³). Water: 1,000. Air: 1.225. Steel: 7,850. Affects buoyancy, flow, and structural loads.
Nv M3
Mass per unit volume (kg/m³). Water: 1,000. Air: 1.225. Steel: 7,850. Affects buoyancy, flow, and structural loads.
Eg Ev
Capacity to do work (J or kWh). Conserved — converts between forms but total stays constant in a closed system.
T K
Thermal state of the substance. Check whether the formula needs Celsius, Fahrenheit, or Kelvin (K = °C + 273.15).
Results
intrinsic carrier concentration ni (m⁻³)
The proportional relationship between two quantities.