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sci.semiconductor-pn-junction-built-in Calculator
Calculates the pn junction built-in voltage Vbi = (kT/q) × ln(Na×Nd/ni²) and equilibrium depletion width from doping concentrations and dielectric constant. Vbi ≈ 0.7 V for silicon, 1.3 V for GaAs — Vbi determines the zero-bias diode capacitance and junction breakdown voltage.
Inputs
Na M3
Amount of solute per unit volume. Higher concentration = more solute dissolved.
Nd M3
Amount of solute per unit volume. Higher concentration = more solute dissolved.
Ni M3
Amount of solute per unit volume. Higher concentration = more solute dissolved.
T K
Thermal state of the substance. Check whether the formula needs Celsius, Fahrenheit, or Kelvin (K = °C + 273.15).
Results
built-in potential Vbi (V)
Sample size or count used in the calculation.
kT/q at temperature (V)
The value at the specified point or condition.
Vbi = (kT/q)·ln(Na·Nd/ni²)
Sample size or count used in the calculation.
p-side acceptor Na
Sample size or count used in the calculation.
n-side donor Nd
Sample size or count used in the calculation.
junction type
The classification or type assigned based on the inputs.